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Laser-induced etching of few-layer graphene synthesized by Rapid-Chemical Vapour Deposition on Cu thin films

Marco Piazzi12*, Luca Croin13, Ettore Vittone2 and Giampiero Amato1

Author Affiliations

1 Quantum Research Laboratory, Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce 91, 10135 Turin, Italy

2 Department of Physics, NIS Centre of Excellence and CNISM, University of Turin, Via Pietro Giuria 1, 10125 Turin, Italy

3 Department of Applied Science and Technology, Politecnico of Turin, Corso Duca deli Abruzzi 24, 10129 Turin, Italy

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SpringerPlus 2012, 1:52  doi:10.1186/2193-1801-1-52

Published: 27 November 2012


The outstanding electrical and mechanical properties of graphene make it very attractive for several applications, Nanoelectronics above all. However a reproducible and non destructive way to produce high quality, large-scale area, single layer graphene sheets is still lacking. Chemical Vapour Deposition of graphene on Cu catalytic thin films represents a promising method to reach this goal, because of the low temperatures (T < 950°C−1000°C) involved during the process and of the theoretically expected monolayer self-limiting growth. On the contrary such self-limiting growth is not commonly observed in experiments, thus making the development of techniques allowing for a better control of graphene growth highly desirable. Here we report about the local ablation effect, arising in Raman analysis, due to the heat transfer induced by the laser incident beam onto the graphene sample.

CVD graphene; Copper; Laser induced etching; Heating ablation effects; 61.80.Ba; 81.15.Gh; 61.48.Gh; 81.05.ue